Computer-aided modelling of discrete high-frequency transistors
作者:
K.B.Kumar,
V.M.Pandharipande,
期刊:
IEE Proceedings H (Microwaves, Antennas and Propagation)
(IET Available online 1988)
卷期:
Volume 135,
issue 3
页码: 171-179
年代: 1988
DOI:10.1049/ip-h-2.1988.0037
出版商: IEE
数据来源: IET
摘要:
Linear models for high-frequency transistors (bipolar and MESFET) at different biasing conditions are described. The model for a bipolar (MESFET) transistor shows good agreement between the measured and simulatedY(z) parameters. A discrete high frequency transistor is represented as a combination of two transistors and the bias dependence of the parameters of both intrinsic and extrinsic transistors are determined. A fully-automated equivalent-circuit parameter extraction program to fit the measured two-port MESFET data optimally up to 18 GHz is developed.
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