Molecular beam epitaxy versus chemical vapor deposition of silicon on sapphire
作者:
Eliezer Dovid Richmond,
Mark E. Twigg,
Syed Qadri,
Joseph G. Pellegrino,
Michael T. Duffey,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 25
页码: 2551-2553
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102884
出版商: AIP
数据来源: AIP
摘要:
Molecular beam epitaxy (MBE) of Si on sapphire (SOS) has dramatically different and superior properties compared to chemical vapor deposited (CVD) SOS. The strain in the Si epilayer decreases by 21%. A 40% higher electron Hall mobility occurs at room temperature. At LN2temperatures the electron mobility increases to a level which is more indicative of bulk Si than of CVD SOS. The microtwin differential volume fraction profile is lower by more than an order of magnitude, and decreases below the detectable limit at 300 nm from the interface. The average Si/sapphire interface charge for MBE SOS is −8.0×1010cm−2, while the interface charge of CVD SOS is 2×1012cm−2.
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