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Lift‐off process for achieving fine‐line metallization

 

作者: A. A. Milgram,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 2  

页码: 490-493

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582632

 

出版商: American Vacuum Society

 

关键词: resolution;metallization;high temperature;thickness;line widths;polyamides;vacuum evaporation;coatings;layers;etching;plasma jets;photoresists;fabrication;films;lithography;copper alloys

 

数据来源: AIP

 

摘要:

A trilevel lift‐off process using a soluble polyimide as the base layer is described. Al–Cu–Si metallizations are obtained with good pattern fidelity over 1 μm high structures with the use of substrate metallization temperatures of up to 325 °C. The process routinely produces metallizations 1 μm thick with linewidths less than 1.5 μm and pitch less than 2.5 μm.

 

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