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Low‐threshold (≤ 92 A/cm2) 1.6 &mgr;m strained‐layer single quantum well laser diodes optically pumped by a 0.8 &mgr;m laser diode

 

作者: C. E. Zah,   R. Bhat,   K. W. Cheung,   N. C. Andreadakis,   F. J. Favire,   S. G. Menocal,   E. Yablonovitch,   D. M. Hwang,   M. Koza,   T. J. Gmitter,   T. P. Lee,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 16  

页码: 1608-1609

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103362

 

出版商: AIP

 

数据来源: AIP

 

摘要:

To explore the ultimate threshold current limit in long‐wavelength semiconductor lasers, InxGa1−xAs/InP strained‐layer single quantum well laser diodes were studied for the first time by optically pumping with a 0.8 &mgr;m laser diode. Low‐threshold (≤92 A/cm2) cw operation was obtained and the lasing wavelength (1.62 &mgr;m) corresponding to the transition from the first quantization state of a 25 A˚ In0.8Ga0.2As well was observed. By taking the carrier collection efficiency (≤77%) into account, the actual threshold current density could be as low as 70 A/cm2.

 

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