Thin ⟨110⟩ silicon crystals were bombarded with 14 MeV oxygen ions in a transmission channeling geometry. The ions exited the crystals through a thin layer of Au or Ag, and scattered ions were detected at a glancing exit angle. Spectra were collected for each consecutive dose and analyzed to determine the number of disordered silicon atoms produced per dose. Disorder at the metal–silicon interface was observed that increased linearly with dose from 5×1015to 5×1016oxygen ions/cm2. Beam heating, and nuclear and electronic stopping power are discussed as possible sources of the disorder.