Open‐circuit voltage‐decay behavior inp‐njunction diode at high injection
作者:
R. Gopal,
R. Dwivedi,
S. K. Srivastava,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 9
页码: 3476-3480
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335770
出版商: AIP
数据来源: AIP
摘要:
The open‐circuit voltage‐decay of a highly forward biasedp‐njunction diode switched off abruptly after reaching steady state is studied theoretically for high‐level injection. The present theory takes into account the terminal voltage instead of junction voltage as the open‐circuit voltage, and is based on ambipolar diffusion phenomenon. The results are in qualitative agreement with the available experimental results for the entire range of decay characteristics.
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