Pressure dependence of electrical properties of metal‐oxide semiconductor transitors
作者:
B. Moret,
P. Destruel,
Bui Ai,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 1
页码: 519-521
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328448
出版商: AIP
数据来源: AIP
摘要:
This paper gives some results on the effects of hydrostatic pressure on electrical characteristics of metal‐oxide semiconductor transistor devices . An enhancement of about 4%–5% in the drain‐source current has been obtained for pressures of the order of 4000 bars. A study of this effect shows that the current increase in essentially due to a change of the mobility of carriers at the interface, rather than to a modification of the oxide layer or interface.
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