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Raman scattering studies of surface space charge layers and Schottky barrier formation in InP

 

作者: A. Pinczuk,   A. A. Ballman,   R. E. Nahory,   M. A. Pollack,   J. M. Worlock,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 5  

页码: 1168-1170

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570183

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;SCHOTTKY BARRIER DIODES;SURFACES;SPACE CHARGE;RAMAN SPECTRA;PHONONS;BAND THEORY;PHOTOVOLTAIC EFFECT;FERMI LEVEL;GAS LASERS;ARGON IONS;INDIUM;FILMS

 

数据来源: AIP

 

摘要:

We show that Raman scattering by LO phonons and their coupled modes can be used to obtain quantitative information on the band bending at surfaces or interfaces of doped III–V semiconductors. We have studied Schottky barrier formation and effects related to surface photovoltage at etched<111≳Bsurfaces of InP. These experiments yield information similar to that obtained from photoemission and photovoltage measurements, but they can also be carried out on surfaces which are contaminated or even covered with partially transparent layers such as metallic films.

 

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