Electronic structure of the nanoscale Al/SiO2/Si system
作者:
V. G. Zavodinsky,
I. A. Kuyanov,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 1
页码: 21-24
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589248
出版商: American Vacuum Society
关键词: Al;Si;SiO2
数据来源: AIP
摘要:
Local-density approximation calculations have been used to study the electronic structure of the Al14/n-fold SiO2ring/Si15cluster system forn=3, 4, and 6. The sixfold ring placed between aluminum and silicon has an insulator character with the fundamental band gap of 4 eV and the energetic barrier of 3.5 eV. The fourfold ring has a band gap of 2 eV, however its insulator properties are doubtful because of the very small distance between the Fermi level and the first unoccupied state (0.2 eV). The threefold SiO2ring has not a fundamental gap at all. Considering the Al14/n-fold SiO2ring /Si15H̄18system as a model of the metal-oxide-semiconductor device, we can predict that the thin silica film (d≈7 Å) can be used as an insulator layer. However, if the thickness is less than 5 Å, the insulator properties of silica disappear.
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