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SiO2/InP interfaces with reduced interface state density

 

作者: J. F. Wager,   M. D. Clark,   R. A. Jullens,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 584-587

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582843

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;INTERFACE STATES;CV CHARACTERISTIC;TRAPS;CHEMICAL VAPOR DEPOSITION;INTERFACE STRUCTURE;SILICA;SAMPLE PREPARATION;MIS JUNCTIONS;POTASSIUM HYDROXIDES;METHANOL;SURFACE CONTAMINATION

 

数据来源: AIP

 

摘要:

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma‐enhanced chemically vapor deposited SiO2/InP structures has been significantly reduced. Capacitance–voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of ap‐type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In2O3and is contaminated with K.

 

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