AlGaN ultraviolet photoconductors grown on sapphire
作者:
D. Walker,
X. Zhang,
P. Kung,
A. Saxler,
S. Javadpour,
J. Xu,
M. Razeghi,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 15
页码: 2100-2101
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115597
出版商: AIP
数据来源: AIP
摘要:
AlxGa1−xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage‐dependent responsivity is 0.13–0.36 ms. ©1996 American Institute of Physics.
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