首页   按字顺浏览 期刊浏览 卷期浏览 Studies of ferroelectric heterostructure thin films, interfaces, and device-related pro...
Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes viain situanalytical techniques

 

作者: Orlando Auciello,   AlanR. Krauss,   Jaemo Im,   Anil Dhote,   DieterM. Gruen,   Sanjeev Aggarwal,   Ramamoorthy Ramesh,   EugeneA. Irene,   Ying Gao,   AlexH. Mueller,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 103-118

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228460

 

出版商: Taylor & Francis Group

 

关键词: in situcharacterization;ferroelectric films;ion scattering;recoil spectroscopy;spectroscopic ellipsometry;SFM piezoresponse;X-ray scattering

 

数据来源: Taylor

 

摘要:

The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as “smart cards”, while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementaryin situcharacterization techniques is critical to understand film growth and device processes relevant to device development.

 

点击下载:  PDF (1017KB)



返 回