The first observation of minority‐carrier injection annealing of radiation‐induced defects in InP is reported. Minority‐carrier injection due to both forward bias application and light illumination at room temperature after electron irradiation is shown to enhance defect annealing inp‐InP and to result in the recovery of InP solar cell properties. These results suggest that most InP‐based devices under minority‐carrier injection mode operation conditions are more radiation resistant than any other material‐based devices.