Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor
作者:
D. M. Williams,
B. W. Wessels,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 6
页码: 566-568
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102746
出版商: AIP
数据来源: AIP
摘要:
Yb‐doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta‐diketonate. The doped layers werentype with carrier concentrations ranging from 0.6 to 17×1015cm−3. The doped layers exhibited the characteristic Yb+3‐4fphotoluminescent emission at 1.23 eV. The low‐temperature photoluminescence indicates the association of Yb with other centers to form complexes.
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