Imprint testing of ferroelectric capacitors used for non-volatile memories
作者:
R. Dat,
D.J. Lichtenwalner,
O. Auciello,
A.I. Kingon,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 5,
issue 4
页码: 275-286
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408223884
出版商: Taylor & Francis Group
关键词: Imprint;fatigue;retention;ferroelectric memory;lead-zirconate-titanate
数据来源: Taylor
摘要:
A set of criteria is presented, based on the polarization versus electric field hysteresis characteristics, which can be used to reveal a tendency towards imprint failure in ferroelectric capacitors. A series of pulsed voltage waveforms, generated by the RT66A ferroelectric tester, are utilized to validate our established criteria for the tendency towards imprinting. The tests have been performed on hetero-structure Pb(ZrxTi1−x)O3(PZT)-based capacitors produced by a pulsed laser ablation depositon technique (PLAD). The loss of retained charge in the ferroelectric capacitors is considered in light of the imprint test methodology. Rates of retention loss and imprint are extracted from the experimental data and treated as separate processes that lead to device failure. The rate of approach towards imprint failure is found to be influenced by the magnitude of the read pulse.
点击下载:
PDF (637KB)
返 回