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The temperature characteristics of InGaAsP/InP buried heterostructure lasers

 

作者: M. Gault,   P. Mawby,   A. R. Adams,   M. Towers,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 74, issue 12  

页码: 7621-7623

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354942

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The temperature characteristics of 1.3 &mgr;m InGaAsP/InP buried heterojunction lasers are investigated using a fully self‐consistent two dimensional numerical model. Devices operating at 1.3 &mgr;m are very temperature sensitive and therefore the model includes for the first time coupled solutions to the thermal as well as the electrical and optical equation sets. Good agreement is found with experimental results, including the temperature dependence of the threshold current and the prediction of a break‐point temperature.

 

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