The temperature characteristics of InGaAsP/InP buried heterostructure lasers
作者:
M. Gault,
P. Mawby,
A. R. Adams,
M. Towers,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 12
页码: 7621-7623
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354942
出版商: AIP
数据来源: AIP
摘要:
The temperature characteristics of 1.3 &mgr;m InGaAsP/InP buried heterojunction lasers are investigated using a fully self‐consistent two dimensional numerical model. Devices operating at 1.3 &mgr;m are very temperature sensitive and therefore the model includes for the first time coupled solutions to the thermal as well as the electrical and optical equation sets. Good agreement is found with experimental results, including the temperature dependence of the threshold current and the prediction of a break‐point temperature.
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