Positive sample bias effect in scanning tunneling microscope imaging of low coverage alkali metal atoms on Si(111)7×7 surface
作者:
J. Eitle,
D. Gorelik,
S. Aloni,
T. Margalit,
D. Meyler,
G. Haase,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 5
页码: 2894-2897
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590290
出版商: American Vacuum Society
关键词: Si
数据来源: AIP
摘要:
Already at coverages as low as 0.005 monolayer of potassium on room temperature Si(111)7×7 surfaces, atomic resolution is gradually lost when imaging the surface with scanning tunneling microscope at positive sample bias, giving rise to bright triangles over the faulted halves of the 7×7 unit cells and dark triangles above the unfaulted halves. We suggest that this is due to potassium atoms that are picked up by the tip fromKislands at the surface, as is evident by the observed lowering of the tunneling energy barrier. This phenomenon vanishes upon thermal desorption ofKislands or upon exposure to 0.1 L oxygen.
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