A novel x‐ray technique and its application to semiconductor problems is described. The technique is capable of recording large‐area transmission topographs of crystal slices as processed in modern semiconductor device technology. The technique is nondestructive and, therefore, crystal slices can be examined after each processing step. This technique and some of the results obtained are discussed, such as x‐ray topographs of diffused transistor structures, recorded in the presence of elastic and/or frozen‐in lattice deformations.