High-voltage electron-microscope investigation of point-defect agglomerates in irradiated copper during in-situ annealing
作者:
W. Jäger,
W. Frank,
K. Urban,
期刊:
Radiation Effects
(Taylor Available online 1980)
卷期:
Volume 46,
issue 1-2
页码: 47-57
ISSN:0033-7579
年代: 1980
DOI:10.1080/00337578008209151
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Thin copper foils were irradiated with 650 keV electrons at 10 K in a high-voltage electron microscope (HVEM) to doses φ in the range 2 × 1023electrons/m2≲ φ ≲ 2 × 1025electrons/m2and then annealed in situ up to room temperature and outside the HVEM between room temperature and 470 K. During irradiation visible defect clusters were formed only at φ ≳ 2.5 × 1024electrons/m2. At smaller doses defect clusters became visible after annealing at 50 K. Between 50 K and 120 K further clusters, mainly dislocation loops on {111} planes, appeared. Above 120 K, particularly between 160 K and 300 K, some of the dislocation loops became glissile. They glided out of the specimens or agglomerated to larger clusters of frequently complex shapes. As a consequence, between 160 K and 300 K the cluster density decreased strongly, whereas the mean cluster size increased monotonously through the entire range of annealing temperatures covered. Contrast analyses between 180 K and 400 K revealed that the great majority of the dislocation loops were of interstitial type. At 470 K a new type of small clusters emerged, presumably of vacancy type. These observations are compared with other studies on electron-irradiated copper and with the current models of radiation damage in metals.
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