Aluminum single-electron nonvolatile floating gate memory cell
作者:
C. D. Chen,
Y. Nakamura,
J. S. Tsai,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 2038-2040
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119780
出版商: AIP
数据来源: AIP
摘要:
We have developed an aluminum single-electron transistor device which was modified to incorporate an additional floating node in between the gate and the electrometer. At high gate voltages, Fowler–Nordheim type emission occurred between the gate and the floating node where the charges were stored. The emission events were evidenced by the oscillatory electrometer current which allowed estimation of the number of storage electrons. We demonstrated experimentally the nonvolatile memory function of this device and the results were justified by numeric simulations. ©1997 American Institute of Physics.
点击下载:
PDF
(161KB)
返 回