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Hillock formation during electromigration in Cu and Al thin films: Three‐dimensional grain growth

 

作者: A. Gladkikh,   Y. Lereah,   E. Glickman,   M. Karpovski,   A. Palevski,   J. Schubert,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 10  

页码: 1214-1215

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113240

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The evolution of microstructure in Al and Cu thin film lines during electromigration has been studied using a transmission electron microscopy. Grain boundary migration was found to be critically involved in the electromigration induced hillock formation that can be described as a three‐dimensional growth of a single grain. ©1995 American Institute of Physics.

 

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