Large area silicon on insulator by double‐merged epitaxial lateral overgrowth
作者:
Chitra K. Subramanian,
Gerold W. Neudeck,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 2
页码: 643-647
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586425
出版商: American Vacuum Society
关键词: SILICON;EPITAXY;WAFERS;THIN FILMS;FEASIBILITY STUDIES;SILICON OXIDES;INTEGRATED CIRCUITS;ELECTRICAL INSULATORS;Si
数据来源: AIP
摘要:
The process and feasibility verification for a full wafer silicon‐on‐insulator (SOI) process by using two merged epitaxial lateral overgrowths has been achieved. This process can be used to produce SOI material with a wide range of silicon thicknesses from 0.1 μm to several microns thick and is compatible with three‐dimensional circuit integration. Formation of local area SOI islands, formation of vertical wall seed windows, and epitaxial lateral overgrowth from these narrow vertical seeds have been demonstrated. This SOI process has the potential to reduce the defect density and cost of SOI substrates.
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