The zirconium doped (Ba0.65Sr0.35)(Ti1−xZrx)O3thin films for gbit-scale dynamic random access memory device applications
作者:
Jae-Sun Kim,
Soon-Gil Yoon,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 24,
issue 1-4
页码: 65-74
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215579
出版商: Taylor & Francis Group
关键词: BSTZ;DRAM;Schottky barrier height;Pt3Ti;rf-magnetron sputtering
数据来源: Taylor
摘要:
High dielectric constant (Ba0.65Sr0.35)(Ti1−xZrx)O3(BSTZ) thin films with different Zr content were prepared on Pt/Ti/SiO2/Si substrates at 500°C by rf magnetron sputtering technique. The grain size, dielectric constant, and leakage current density of the 90 nm thick BSTZ films decreased with increasing Zr content. The dielectric constant and dissipation factor of BSTZ films with Zr content of 0.26 were 390 and 0.025 at an applied frequency of 100 kHz, respectively. The leakage current density of films was about 9.0 × 10−9A/cm2at 200 kV/cm. The decrease of leakage current density with increasing Zr content was due to increase of Schottky barrier height. The BSTZ films deposited by rf magnetron sputtering were attractive for semiconductor memory capacitor application.
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