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Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system

 

作者: M. Leibovitch,   P. Ram,   L. Malikova,   Fred H. Pollak,   J. L. Freeouf,   L. Kronik,   B. Mishori,   Yoram Shapira,   A. R. Clawson,   C. M. Hanson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 4  

页码: 3089-3094

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589069

 

出版商: American Vacuum Society

 

关键词: THIN FILMS;HETEROJUNCTIONS;INDIUM PHOSPHIDES;INDIUM ARSENIDES;GALLIUM ARSENIDES;PHOTOVOLTAIC EFFECT;ELECTRONIC STRUCTURE;DOPED MATERIALS;SILICON ADDITIONS;ZINC ADDITIONS;SULFUR ADDITIONS;TIN ADDITIONS;InP;(In,Ga)As

 

数据来源: AIP

 

摘要:

Using the optical methods of reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance, we have conducted anexsituinvestigation of (a) the InP/In0.53Ga0.47As(001) heterojunction interface as a function of InP overlayer thickness (50–1000 nm) and (b) the surfaces ofn‐ andp‐doped In0.53Ga0.47As(001). All samples were fabricated by organometallic vapor phase epitaxy. The results from these optical probes make it possible to form a comprehensive quantitative picture of the InP/InGaAs heterojunction, including conduction and valence band offsets of 275 and 325 meV, respectively, as well as the (001) surface of InGaAs (surface Fermi level=200 mV from the conduction band edge).

 

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