Distribution of polarized-cathodoluminescence around the structural defects in ZnSe/GaAs(001) studied by transmission electron microscopy
作者:
Tadashi Mitsui,
Naoki Yamamoto,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7492-7496
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365441
出版商: AIP
数据来源: AIP
摘要:
The spatial distribution of the polarized cathodoluminescence (CL) emissions from thin ZnSe films grown by metalorganic vapor phase epitaxy method on GaAs(001) has been examined by a low-temperature polarized CL measurement system combined with a transmission electron microscope. It is found that theY0andY1emissions come from the regions near dislocation tangles and near individual dislocations. The polarized CL images of these emissions show changes in intensity distribution when the polarization condition is changed. The observations suggest that the polarization direction of these emissions is parallel to the dislocation line. ©1997 American Institute of Physics.
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