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Impurity segregation during explosive crystallization of amorphous silicon

 

作者: D. Bensahel,   G. Auvert,   A. Perio,   J. C. Pfister,   A. Izrael,   P. Henoc,  

 

期刊: Journal of Applied Physics  （AIP Available online 1983）
卷期: Volume 54, issue 6  

页码: 3485-3488

 

ISSN:0021-8979

 

年代: 1983

 

DOI:10.1063/1.332413

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Impurity segregation in explosively crystallizeda‐Si presents two different behaviors depending on whether the intermediate liquid phase in the explosive process is large or narrow. This confirms the theories already published. In other words,a‐Si explodes in a way similar toa‐Ge.a‐Si, however, presents a specific type of explosive crystallization explained by its higher nucleation rate with respect toa‐Ge.

 

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