Monte Carlo simulation of mode‐locked semiconductor diode lasers
作者:
J. Werner,
T. P. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 12
页码: 1236-1238
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103495
出版商: AIP
数据来源: AIP
摘要:
We report on results of a Monte Carlo simulation that uses traveling‐wave equations for the optical field of mode‐locked diode lasers. The model includes effects of the spontaneous emission, the linewidth enhancement factor, and nonlinear gain. The results of the simulation agree with experimental observations such as the sublinear power versus current characteristics. According to this model the reduced power is a result of combined large‐signal effects. We propose to incorporate a frequency shifter into the cavity to improve the pulse energy and the use of available bandwidth.
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