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Monte Carlo simulation of mode‐locked semiconductor diode lasers

 

作者: J. Werner,   T. P. Lee,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 57, issue 12  

页码: 1236-1238

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103495

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on results of a Monte Carlo simulation that uses traveling‐wave equations for the optical field of mode‐locked diode lasers. The model includes effects of the spontaneous emission, the linewidth enhancement factor, and nonlinear gain. The results of the simulation agree with experimental observations such as the sublinear power versus current characteristics. According to this model the reduced power is a result of combined large‐signal effects. We propose to incorporate a frequency shifter into the cavity to improve the pulse energy and the use of available bandwidth.

 

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