Photocapacitance spectroscopy of surface states on indium phosphide photoelectrodes
作者:
C. E. Goodman,
B. W. Wessels,
P. G. P. Ang,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 4
页码: 442-444
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95251
出版商: AIP
数据来源: AIP
摘要:
Indium phosphide photoelectrodes have been studiedinsituusing electrochemical photocapacitance spectroscopy. The observed photocapacitance spectra were a strong function of electrode surface conditions. The photoionization energies of the chemically induced surface states correlated well with previously reported values determined by surface photovoltage spectroscopy. The chemical treatment of the InP electrode surface with Co and Pt reduced the concentration of deep level interface states near the valence band and introduced a new state atEv+1.2 eV.
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