Vapor phase epitaxial growth and characterization of InP on GaAs
作者:
S. J. J. Teng,
J. M. Ballingall,
F. J. Rosenbaum,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 18
页码: 1217-1219
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96986
出版商: AIP
数据来源: AIP
摘要:
Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs substrate. Carrier concentration profile and Hall mobility measurements from as‐grownn‐type InP layers show that its doping behavior and mobility are similar to those grown on InP substrates. The results are encouraging for the development of devices utilizing InP/GaAs heterojunctions and the use of bulk GaAs as an alternative substrate to bulk InP for the epitaxial growth of InP and related compounds.
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