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Radiation emission during the on state in a noncrystalline chalcogenide threshold switch

 

作者: G. C. Vezzoli,   P. J. Walsh,   P. J. Kisatsky,   L. W. Doremus,  

 

期刊: Journal of Applied Physics  (AIP Available online 1974)
卷期: Volume 45, issue 10  

页码: 4534-4538

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663083

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Two types of radiation emission have been detected during the on state of threshold switching events in noncrystalline chalcogenide thin films having a transparent SnO2(NESA) bottom electrode and a heat conducting top electrode. The common form of the radiation is an emission at about 1.2–1.4 &mgr;m which (i) is propagated through a wide solid angle, (ii) is relatively independent of time during the on‐state pulse (iii) has an integrated intensity which is approximately a linear function of on‐state power and a superlinear function of on‐state current, and (iv) requires a minimum on‐state current for initiation. The second type of emission is between 0.75 and 3 &mgr;m and is detected rather rarely. This latter emission has a characteristic intensity which is a steeply peaked function of on‐state time and appears to be possibly highly collimated. The peaked emission has been detected in pulsed modes using single set pulses and has also been detected continuously using low‐frequency repetitive threshold set pulses. Both radiation effects appear to be nonthermal in origin.

 

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