Hydrogen‐induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy
作者:
A. Watanabe,
H. Shimaya,
M. Naitoh,
S. Nishigaki,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3599-3602
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588733
出版商: American Vacuum Society
关键词: GaP
数据来源: AIP
摘要:
We report results of a scanning tunneling microscopy investigation on the reconstruction of GaP(001) surfaces. We have observed a 4×2 structure, accompanied locally withc(8×2) domains, at a surface prepared by using ion sputtering and annealing method. On the contrary, both 2×4 [with localc(2×8)] and 4×2 [with localc(8×2)] structures are obtained by hydrogenation followed by annealing. The former consists of a unit structure of three P dimers plus one dimer vacancy, whereas the latter is a parallel arrangement of zig–zag‐chained structures along the [110]direction. It has been shown that the surface hydrogenation before annealing induces new types of reconstruction.
点击下载:
PDF
(276KB)
返 回