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Hydrogen‐induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy

 

作者: A. Watanabe,   H. Shimaya,   M. Naitoh,   S. Nishigaki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1996)
卷期: Volume 14, issue 6  

页码: 3599-3602

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588733

 

出版商: American Vacuum Society

 

关键词: GaP

 

数据来源: AIP

 

摘要:

We report results of a scanning tunneling microscopy investigation on the reconstruction of GaP(001) surfaces. We have observed a 4×2 structure, accompanied locally withc(8×2) domains, at a surface prepared by using ion sputtering and annealing method. On the contrary, both 2×4 [with localc(2×8)] and 4×2 [with localc(8×2)] structures are obtained by hydrogenation followed by annealing. The former consists of a unit structure of three P dimers plus one dimer vacancy, whereas the latter is a parallel arrangement of zig–zag‐chained structures along the [110]direction. It has been shown that the surface hydrogenation before annealing induces new types of reconstruction.

 

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