Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
作者:
Wei Yang,
Thomas Nohova,
Subash Krishnankutty,
Robert Torreano,
Scott McPherson,
Holly Marsh,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1086-1088
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122092
出版商: AIP
数据来源: AIP
摘要:
Back-illuminated GaN/AlGaN ultraviolet (UV) heterojunction photodiodes with high quantum efficiencies are demonstrated. Photovoltaic (zero bias) responsivity of 0.2 A/W at 355 nm was achieved. The improved efficiencies primarily arise from the use of AlGaN/GaN heterojunction in which photons are absorbed within thep-njunction thus eliminates carrier losses due to surface recombination and diffusion processes in previously reported homojunction devices. Very high dark impedance and large visible rejection ratio were obtained. These results indicate high quality GaN/AlGaN interface and efficient photocarrier collection in the photodiode. ©1998 American Institute of Physics.
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