Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
作者:
Chee‐Wee Liu,
Sheng‐Li Chen,
Jyh‐pyng Lay,
Si‐Chen Lee,
Hao‐Hsiung Lin,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 20
页码: 1634-1636
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98579
出版商: AIP
数据来源: AIP
摘要:
The silicon doping of GaAs grown by metalorganic chemical vapor deposition using a silane source has been investigated. The amphoteric property of the Si dopant is demonstrated for the first time. It is found that the doping characteristics are strongly temperature dependent. At the growth temperature higher than 600 °C and the arsine to trimethylgallium mole ratio (AsH3/TMG) around 217, the conduction isntype and the carrier concentration increases as the temperature increases. On the other hand, when the growth temperature is lower than 600 °C, the carrier concentration increases as the temperature decreases and the conduction becomesptype at 400–450 °C. In addition, when the AsH3/TMG mole ratio is below 50, the Si‐doped GaAs layers also becomeptype. The GaAs light‐emitting diode is thus successfully fabricated using a single silicon dopant.
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