Schottky junctions have been fabricated by evaporating aluminum on electrodepositedp‐type polycrystalline CuInSe2thin films. The devices showed a rectification effect with an ideality factor of about 2 in the low‐forward‐voltage region. Results of carrier concentration obtained fromC‐Vmeasurements of the Schottky devices were found to be consistent with those for CdS/CuInSe2heterojunctions fabricated on the same substrates. The apparent diffusion potential and carrier concentration of the Al/CuInSe2Schottky junctions were both found to increase after a short heat treatment at 200 °C in air.