Increase of electrical activation and mobility of Si‐doped GaAs, grown at low substrate temperatures, by the migration‐enhanced epitaxy method
作者:
Bijan Tadayon,
Saied Tadayon,
M. G. Spencer,
G. L. Harris,
J. Griffin,
L. F. Eastman,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 1
页码: 589-591
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345202
出版商: AIP
数据来源: AIP
摘要:
Si‐doped GaAs layers were grown by the migration‐enhanced epitaxy (MEE) method and by the conventional molecular‐beam epitaxy (MBE) method, for the substrate temperatures between 220 and 670 °C. For the layers grown below 400 °C, the Si activation and mobility of the MEE layers are significantly higher than those of the MBE layers. For substrate temperatures above 400 °C, the MEE and MBE layers have roughly similar Si activation and mobility. The Raman and 4‐K photoluminescence spectra of the layers are consistent with the measured electron concentrations. This work suggests that for Si doping in GaAs at low substrate temperatures (below 400 °C), the MEE method is a very desirable alternative to the conventional MBE method.
点击下载:
PDF
(351KB)
返 回