首页   按字顺浏览 期刊浏览 卷期浏览 Enhanced dry etching of silicon with deuterium plasma
Enhanced dry etching of silicon with deuterium plasma

 

作者: Hiroaki Iwakuro,   Tsukasa Kuroda,   Dian‐Hong Shen,   Zhangda Lin,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 2  

页码: 707-709

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589160

 

出版商: American Vacuum Society

 

关键词: SILICON;SILICON OXIDES;PHOSPHORUS ADDITIONS;ETCHING;HIGH−FREQUENCY DISCHARGES;COMPARATIVE EVALUATIONS;HYDROGEN;DEUTERIUM;Si:P;SiO2

 

数据来源: AIP

 

摘要:

The etching of Si and SiO2for H2and D2plasma exposure has been investigated. The Si is etched rapidly by a factor of 34 for D2plasma exposure compared with H2plasma exposure. On the other hand, the etching rate of SiO2does not change. This suggests a possibility of dry etching of Si with D2gas.

 

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