InGaAs/InP quantum well lasers with sub‐mA threshold current
作者:
H. Temkin,
N. K. Dutta,
T. Tanbun‐Ek,
R. A. Logan,
A. M. Sergent,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 16
页码: 1610-1612
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104085
出版商: AIP
数据来源: AIP
摘要:
We evaluate the effect of high‐reflectivity facet coatings on the threshold current of lattice matched and compressively strained InGaAs/InP quantum well lasers. A large decrease in the threshold current is observed in structures with low internal losses. Coated lasers exhibit threshold currents as low as 1.1 mA at 20 °C and 0.9 mA at 10 °C, down from ∼15 mA in as‐cleaved devices with cavity length of 200 &mgr;m. These changes are carefully modeled and the prospects for further reduction of the threshold current discussed.
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