The growing processes of the lattice defects with atomic resolution in Si crystals under the 400 kV electron beam irradiation with the dose rate of 5 × 1019electrons/cm2s and the rapid fluctuations of atom images of Si crystal lattice under the 800 kV electron irradiation with the dose rate of 1.56 × 1019electrons/cm2s were recorded using JEOL 400kV analytical atom resolution electron microscope (AARM) at Osaka University and JEOL 1 MeV atom resolution electron microscope (ARM) at UC-Berkeley respectively equipped with a TV image viewings and video recording systems.