Structural properties of gradedSi(1−x)Gexlayers obtained on Si(100) by pulsed laser induced epitaxy were investigated by means of conventional powder x-ray diffraction and x-ray photoelectron spectroscopy. TheSi(1−x)Gexepitaxial layers were formed by pulsed KrF-laser driven rapid melting and crystallization of thin amorphous Ge layers deposited onto the Si(100). The experimental results showed that, by increasing the number of laser pulses, good quality and partially strained epitaxial layers could be attained. A Monte Carlo data evaluation algorithm is proposed, which is capable to determine, by the simultaneous fit of data obtained by x-ray diffraction and x-ray photoelectron spectroscopy, the strain level as a function of Ge concentration. ©1997 American Institute of Physics.