Effect of Oxygen on Etch‐Pit Formation in Silicon
作者:
R. A. Logan,
A. J. Peters,
期刊:
Journal of Applied Physics
(AIP Available online 1957)
卷期:
Volume 28,
issue 12
页码: 1419-1423
ISSN:0021-8979
年代: 1957
DOI:10.1063/1.1722670
出版商: AIP
数据来源: AIP
摘要:
The etching behavior of as‐grown and heat‐treated silicon crystals has been studied using an etching procedure developed by Dash. The rate of chemical etching of silicon was found to decrease with increased concentration of dissolved oxygen. This effect impedes the formation of etch‐pits. To explain the observed etching behavior after heat treatment it is necessary to assume that the rate of chemical etching increases with increased amount of precipitated oxygen in pulled crystals.
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