Determination of the gain nonlinearity time constant in 1.3 &mgr;m semiconductor lasers
作者:
J. Eom,
C. B. Su,
W. Rideout,
R. B. Lauer,
J. S. LaCourse,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 3
页码: 234-236
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104699
出版商: AIP
数据来源: AIP
摘要:
By comparison of the measuredKfactors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry–Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3 &mgr;m InGaAsP lasers is about 0.1 ps. This short time constant is consistent with spectral hole burning being the dominant process responsible for the nonlinear gain.
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