The electrical characteristics of shallow junction devices are often dependent on tightly controlled ion implants for their performance and yield. However, concerns exist over the ability of existing in-line metrology tools to accurately verify low energy implants, and therefore, determine whether the ion implanter is in control before committing product to it. This article will explore the capabilities of the Therma-Probe TP500, the Tencor OmniMap RS75, and secondary-ion-mass spectroscopy to measure low energy ion implants done on an Applied Materials xR-LEAP with energies10 keVand below, doses of1.0E15–3.0E15 cm−2,and both boron and arsenic species.