Experimental results are reported concerning temperature effects from 25 to 125 °C on Schottky‐barrier solar cells which were fabricated using a semitransparent Cu/Cr barrier metal layer onp‐type silicon. The open‐circuit voltage decreased by 2.3 mV/°C and the fill factor by 0.11&percent;/°C, while the short‐circuit current increased slightly with increased temperature. These results are consistent with previous work onp‐n–junction silicon solar cells. The diode quality factornwas shown to decrease with increased temperature, as predicted by field emission theory. The room‐temperature photovoltaic output of cell 96 remained at 0.54 V, 25.4 mA/cm2, and 8.5–10.6&percent; efficiency using 80–100‐mW/cm2sunlight illumination after repeated temperature cycling.