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Modulation‐doped HgCdTe quantum well structures and superlattices

 

作者: Jeong W. Han,   S. Hwang,   Y. Lansari,   Z. Yang,   J. W. Cook,   J. F. Schetzina,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 205-209

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584810

 

出版商: American Vacuum Society

 

关键词: SUPERLATTICES;MERCURY ALLOYS;CADMIUM ALLOYS;TELLURIUM ALLOYS;OPTICAL PROPERTIES;ELECTRICAL PROPERTIES;DOPED MATERIALS;MOLECULAR BEAM EPITAXY;FABRICATION;(Hg,Cd)Te

 

数据来源: AIP

 

摘要:

Photoassisted molecular‐beam epitaxy (MBE) has been employed to successfully preparep‐type andn‐type modulation HgCdTe. In this paper, we report details of the MBE growth experiments and describe the structural, optical, and electrical properties that these new quantum well structures and superlattices of HgCdTe possess.

 

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