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Feasibility study of photocathode electron projection lithography

 

作者: Gordon F. Saville,   P. M. Platzman,   George Brandes,   Rene Ruel,   Robert L. Willett,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 6  

页码: 2184-2188

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588101

 

出版商: American Vacuum Society

 

关键词: NANOSTRUCTURES;PMMA;LITHOGRAPHY;ELECTRON BEAMS;KEV RANGE 01−10;MAGNETIC FIELDS;PHOTOCATHODES;GOLD;Au

 

数据来源: AIP

 

摘要:

Photocathode electron projection is an electron lithography technique that may be used to pattern semiconductors at the deep submicron level. Using a robust gold cathode, mask features in the range of 0.11–0.54 μm have been transferred to electron resist coated wafers with adequate depth of focus (≂5 μm) and large field of view (≂2 cm2). Low accelerating voltages ∼3 keV minimize proximity effects, and with a mask to wafer spacing of a few millimeters, the necessary magnetic field is ≂0.46 T.

 

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