首页   按字顺浏览 期刊浏览 卷期浏览 Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy

 

作者: R. Korenstein,   P. Madison,   P. Hallock,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 4  

页码: 1370-1375

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585870

 

出版商: American Vacuum Society

 

关键词: BINARY COMPOUNDS;TERNARY COMPOUNDS;CADMIUM TELLURIDES;MERCURY TELLURIDES;EPITAXY;X−RAY DIFFRACTION;PHOTOLUMINESCENCE;ETCH PITS;CHEMICAL VAPOR DEPOSITION;CRYSTAL DEFECTS;(Cd,Te);(Hg,Cd,Te)

 

数据来源: AIP

 

摘要:

(111) CdTe has been grown on both GaAs/Si and Si by hot wall epitaxy. X‐ray diffraction, photoluminescence, and defect etching indicate that these layers are of high crystalline quality. For CdTe grown on GaAs/Si, full width at half‐maximum of x‐ray rocking curves as low as 59 arcsec have been obtained whereas for CdTe grown on Si, x‐ray linewidths as narrow as 315 arcsec have been obtained. HgCdTe grown on (111)B CdTe/GaAs/Si by metalorganic chemical vapor deposition is very smooth and devoid of the many defects that plague other orientations.

 

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