Nucleation of copper on TiW and TiN during chemical vapor deposition
作者:
Do‐Heyoung Kim,
Robert H. Wentorf,
William N. Gill,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 8
页码: 5164-5166
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354280
出版商: AIP
数据来源: AIP
摘要:
Copper grows as continuous films on various silicides and metals at substrate temperatures of 310–385 °C, total pressures of 2–10 Torr, and precursor vessel temperatures of 60–80 °C (precursor mole fractions of 0.004–0.35) with hydrogen using copper (II) hexafluoroacetylacetonate [Cu(HFA)2] as the precursor. However, on TiW, TiW:N, and TiN substrates, that were previously exposed to air, copper formed only small crystalline aggregates, not continuous films, perhaps because of a thin surface layer of oxide. This conclusion was supported by Auger electron spectroscopy and scanning electron microscopy analyses.
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