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Lattice‐Matched GaInAsSb/AlGaAsSb/GaSb Materials for Thermophotovoltaic Devices

 

作者: C. A. Wang,   C. J. Vineis,   H. K. Choi,   M. K. Connors,   R. K. Huang,   L. R. Danielson,   G. Nichols,   G. W. Charache,   D. Donetsky,   S. Anikeev,   G. Belenky,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1903）
卷期: Volume 653, issue 1  

页码: 324-334

 

ISSN:0094-243X

 

年代: 1903

 

DOI:10.1063/1.1539387

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open‐circuit voltage within about 15&percent; of the limit are reported. This paper discusses detailed studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime that have led to these results. For further improvements in TPV cell performance, device structures with either a distributed Bragg reflector or a back‐surface reflector are described. © 2003 American Institute of Physics

 

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