Low‐temperature grown surface‐reflection all‐optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low switching energy (2 pJ), high‐contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 &mgr;m band using low‐temperature‐grown Be‐doped strained InGaAs/InAlAs multiple quantum wells. The combination of low‐temperature growth and Be‐doping contributes to the ultrafast photoresponse. Additionally, the introduction of compressive strain and a mirror with 1% reflectivity greatly enhances optical nonlinearities. ©1996 American Institute of Physics.