Low noise avalanche photodiodes, which have ann+‐p‐&pgr;‐p+structure, are reported. Channeled boron ions (800 keV) in the ⟨110⟩ of Si are used for forming theplayer. The characteristics of this diode are compared with those fabricated by 800‐keV random implantation. Low excess noise factorsF=4–5 at a gain of 100 are obtained by using ⟨110⟩ channeled implantation, whereasF=6–7 for random implantation. By using parallel implantation, the uniformity of channeled distributions of boron ions are found to be fairly good at different locations in a wafer.